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| GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 2.54mm spacing o0.45 o4.8 o4.6 1 0.9 .1 GEO06314 Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g o5.6 o5.3 o0.45 (2.7) Chip position Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 0 2.54 mm spacing welded 14.5 12.5 Approx. weight 0.35 g Chip position (2.7) o0.45 5.5 5.0 14.5 12.5 5.3 5.0 o5.6 o5.3 GET06013 Cathode (SFH 402, BPX 65) Anode (SFH 482) Approx. weight 0.5 g 2.54 spacing o4.8 o4.6 Radiant sensitive area 1.1 .9 0 1.1 0.9 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1998-04-16 fet06092 fet06091 5.3 5.0 6.4 5.6 o4.8 o4.6 1 0.9 .1 o5.6 o5.3 GET06091 glass lens fet06090 1.1 .9 0 SFH 400, SFH 401, SFH 402 Wesentliche Merkmale q Hergestellt im Schmelzepitaxieverfahren q Kathode galvanisch mit dem Gehauseboden verbunden q Hohe Zuverlassigkeit q SFH 400: Gehausegleich mit SFH 216 q SFH 401: Gehausegleich mit BPX 43, BPY 62 q SFH 402: Gehausegleich mit BPX 38, BPX 65 Anwendungen q Lichtschranken fur Gleich- und Features q Fabricated in a liquid phase epitaxy process q Cathode is electrically connected to the case q High reliability q SFH 400: Same package as SFH 216 q SFH 401: Same package as BPX 43, BPY 62 q SFH 402: Same package as BPX 38, BPX 65 Applications q q q q Wechsellichtbetrieb q IR-Fernsteuerungen q Industrieelektronik q "Messen/Steuern/Regeln" Photointerrupters IR remote control Industrial electronics For drive and control circuits Typ Type SFH 400 SFH 400-3 SFH 401-2 SFH 401-3 SFH 402 SFH 402-3 SFH 402-2 Bestellnummer Ordering Code Q62702-P96 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P98 Q62702-P790 on request Gehause Package 18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch dichtes Gehause, Anschlusse im 2.54-mm-Raster (1/10'') 18 A3 DIN 41876 (TO-18) glass lens, hermetically sealed package, solder tabs lead spacing 2.54 mm (1/10'') Semiconductor Group 2 1998-04-16 SFH 400, SFH 401, SFH 402 Grenzwerte (TC = 25 C) Maximum Ratings Bezeichnung Description SFH 401: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400, SFH 402: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax Spectral bandwidth at 50 % of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle SFH 400 SFH 401 SFH 402 Aktive Chipflache Active chip area Symbol Symbol peak Wert Value 950 Einheit Unit nm Symbol Symbol Wert Value - 55 ... + 100 Einheit Unit C Top; Tstg Top; Tstg - 55 ... + 125 C Tj VR IF IFSM Ptot RthJA RthJC 100 5 300 3 470 450 160 C V mA A mW K/W K/W 55 nm 6 15 40 0.25 Grad deg. mm2 A Semiconductor Group 3 1998-04-16 SFH 400, SFH 401, SFH 402 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Abmessungen der aktiven Chipflache Dimension of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top SFH 400 SFH 401 SFH 402 Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Symbol Symbol Wert Value 0.5 x 0.5 Einheit Unit mm LxB LxW H H H tr, tf 4.0 ... 4.8 2.8 ... 3.7 2.1 ... 2.7 1 mm mm mm s Co 40 pF VF VF IR 1.30 ( 1.5) 1.90 ( 2.5) 0.01 ( 1) V V A e 8 mW TCI - 0.55 %/K IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TCV TC - 1.5 + 0.3 mV/K nm/K Semiconductor Group 4 1998-04-16 SFH 400, SFH 401, SFH 402 Gruppierung der Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Symbol Symbol SFH 400 Strahlstarke Radiant intensity Ie min IF = 100 mA, tp = 20 ms Ie max Strahlstarke Radiant intensity IF = 1 A, tp = 100 s 20 - Wert Value SFH SFH SFH SFH 400-3 401-2 401-3 402 32 - 10 20 16 - 2.5 - SFH SFH 402-2 402-3 2.5 - 4 - mW/sr mW/sr Einheit Unit Ie typ. 300 320 120 190 40 40 40 mW/sr Semiconductor Group 5 1998-04-16 SFH 400, SFH 401, SFH 402 Radiation characteristics, SFH 400 Irel = f () 40 30 20 10 0 1.0 OHR01883 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation characteristics, SFH 401 Irel = f () 40 30 20 10 0 1.0 OHR01884 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation characteristics, SFH 402 Irel = f () 40 30 20 10 0 1.0 OHR01885 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 6 1998-04-16 SFH 400, SFH 401, SFH 402 Ie = f (IF) Ie 100 mA Relative spectral emission Irel = f () 100 % OHRD1938 Radiant intensity Single pulse, tp = 20 s e 10 2 OHR01037 Max. permissible forward current SFH 401, IF = f (TA) 350 OHR00486 e (100 mA) rel F mA 300 250 200 150 80 10 1 60 R thJC = 160 K/W 40 10 20 0 R thJA = 450 K/W 100 50 0 880 920 960 1000 nm 1060 10 -1 10 -2 10 -1 10 0 A F 10 1 0 0 20 40 60 80 C 100 TA , TC Forward current, IF = f (VF) Single pulse, tp = 20 s 10 1 A OHR01040 Permissible pulse handling capability IF = f (), TC = 25 C, RthJC = 160 K/W, duty cycle D = parameter F 10 4 mA 5 OHR01937 Max. permissible forward current SFH 400, SFH 402, IF = f (TA) 350 OHR00395 F tP D= tP T F T D= 0.005 0.01 0.02 0.05 0.1 F mA 300 250 200 150 10 0 typ. max. R thJC = 160 K/W 10 3 5 0.2 0.5 10 -1 R thJA = 450 K/W DC 100 50 10 -2 1 1.5 2 2.5 3 3.5 4 V 4.5 VF 10 2 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 20 40 60 80 100 C 130 TA , TC Semiconductor Group 7 1998-04-16 |
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